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APTM100H18F
Full - Bridge MOSFET Power Module
VB US Q1 Q3
VDSS = 1000V RDSon = 180m max @ Tj = 25C ID = 43A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 OUT1 OUT2
G3
S1 Q2
S3 Q4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
G4
S2 0/VBUS
S4
* *
OUT1 G1 S1 VBUS 0/VBUS G2 S2
* Benefits * * * *
S3 G3 OUT2
S4 G4
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100H18F- Rev 0
Max ratings 1000 43 33 172 30 180 780 25 50 3000
Unit V A V m W A mJ
July, 2004
APTM100H18F
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A Min 1000
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Typ
Max 500 2000 180 5 150
Unit V A m V nA
VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 43A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5
Min
Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 43A IS = - 43A VR = 500V diS/dt = 200A/s IS = - 43A VR = 500V diS/dt = 200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 7.2 19.5
Max 43 33 1.3 18 320 650
Unit A V V/ns ns C
July, 2004 2-6 APTM100H18F- Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 43A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM100H18F
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.16 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100H18F- Rev 0
July, 2004
APTM100H18F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.3 0.9
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120
VGS =15, 10&8V
Transfert Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5 TJ =25C TJ =125C TJ =-55C 6 7 8 9
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
100 80 60 40 20 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 21.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
20
40
60
80
100
120
ID, Drain Current (A)
TC, Case Temperature (C)
July, 2004
APT website - http://www.advancedpower.com
4-6
APTM100H18F- Rev 0
APTM100H18F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) I D=43A TJ=25C
VDS=200V VDS=500V VDS=800V
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=21.5A
1000
100s
100
limited by R DSon 1ms
10 Single pulse TJ =150C 1 1 10 100 1000 VDS , Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage
APT website - http://www.advancedpower.com
5-6
APTM100H18F- Rev 0
July, 2004
APTM100H18F
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =670V RG =2.5 T J=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
t d(on)
0 10 30 50 70 I D, Drain Current (A) 90
Switching Energy vs Gate Resistance
5
Switching Energy (mJ)
7
Switching Energy (mJ)
VDS=670V RG=2.5 TJ=125C L=100H
Eon
4 3 2 1 0
6 5 4 3 2 1 0 0
Eoff
V DS =670V ID=43A T J=125C L=100H
Eoff
Eon
10
30
50
70
90
5
10
15
20
I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 200
Frequency (kHz)
ZVS ZCS
1000
100
150 100 50 0 10 15
VDS=670V D=50% RG=2.5 T J=125C Tc=75C
TJ=150C TJ=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
20 25 30 35 ID, Drain Current (A)
40
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100H18F- Rev 0
July, 2004

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